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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
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H5N2005DL, H5N2005DS
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1373 (Z) Target Specification 1st. Edition Mar. 2001 Features
* Low on-resistance * Low drive current * High speed switching
Outline
DPAK-2
4 4
D
12
3
H5N2005DS
G 12
3
H5N2005DL
S
1. Gate 2. Drain 3. Source 4. Drain
H5N2005DL, H5N2005DS
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Symbol VDSS VGSS ID ID
Note 1 (pulse)
Ratings 200 30 (6) (24) (6)
Unit V V A A A A W C/W C C
I DR I DR
Note 1 (pulse)
(24) 25 5 150 -55 to +150
Pch Note ch-c Tch Tstg
2
2
H5N2005DL, H5N2005DS
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS 200 -- -- (3.0) -- (2.0) -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- (0.52) (3.4) (300) (50) (14) (9.5) (1.8) (5.2) (19) (16) (44) (12) (1.0) (90) (300) Max -- 0.1 1 (4.5) (0.65) -- -- -- -- -- -- -- -- -- -- -- (1.5) -- -- Unit V A A V S pF pF pF nC nC nC ns ns ns ns V ns nC Test Conditions I D = 10 mA, VGS = 0 VGS = 30 V, V DS = 0 VDS = 200 V, VGS = 0 VDS = 10 V, ID = 1 mA I D = 3 A, VGS = 10 V Note 4 I D = 3 A, VDS = 10 V Note 4 VDS = 25 V VGS = 0 f = 1 MHz VDD = 160 V VGS = 10 V ID = 6 A ID = 3 A VGS = 10 V RL = 33.3 Rg = 10 I F = 6 A, VGS = 0 I F = 6 A, VGS = 0 diF/dt = 100 A/us
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total Gate charge Gate to source charge Gateto drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Qrr
3
H5N2005DL, H5N2005DS
Package Dimensions As of January, 2001
6.5 0.5 5.4 0.5 1.7 0.5
Unit: mm
2.3 0.2 0.55 0.1
4.7 0.5
16.2 0.5
3.1 0.5
1.15 0.1 0.8 0.1 (0.7)
5.5 0.5
1.2 0.3
0.55 0.1 2.29 0.5 2.29 0.5
0.55 0.1
Hitachi Code JEDEC EIAJ Mass (reference value)
DPAK (L)-(2) -- -- 0.42 g
4
H5N2005DL, H5N2005DS
As of January, 2001
1.7 0.5
Unit: mm
6.5 0.5 5.4 0.5 2.3 0.2 0.55 0.1 (4.9)
5.5 0.5
1.2 Max
0 - 0.25
1.15 0.1 2.5 0.5 0.8 0.1 2.29 0.5 2.29 0.5
0.55 0.1
Hitachi Code JEDEC EIAJ Mass (reference value)
(5.3)
DPAK (S)-(1),(2) -- Conforms 0.28 g
5
H5N2005DL, H5N2005DS
As of January, 2001
1.5 0.5
Unit: mm
6.5 0.5 5.4 0.5 2.3 0.2 0.55 0.1 (5.1)
(0.1)
(0.1)
5.5 0.5
1.2 Max
0 - 0.25
1.15 0.1 2.5 0.5 0.8 0.1 2.29 0.5 2.29 0.5
0.55 0.1
Hitachi Code JEDEC EIAJ Mass (reference value)
(5.1)
DPAK (S)-(3) -- Conforms 0.28 g
6

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